Vals AI used Claude Opus 5.5 agents to find two room-temperature antiferromagnetic semiconductor candidates. One is a new compound, YBaMnFeO₅, designed by the team. The other is KV[Cr(CN)₆], first made in 1999 but newly identified as Luttinger-compensated. Both sort electron spins without net magnetism. YBaMnFeO₅ may be hard to synthesize in its ordered form. KV[Cr(CN)₆] stayed magnetically ordered up to 376 K in its 1999 sample. The team shared full calculations, code and caveats on GitHub. Both materials have spin-sorting windows far larger than room-temperature thermal noise. The next step is to remake KV[Cr(CN)₆] and measure its spin sorting directly.
What changed
No known room-temperature Luttinger-compensated semiconductor existed before this work.
What it unlocks
Designing and identifying materials that sort electron spins without net magnetism for spintronic memory.
- 2.35 eV band gap for YBaMnFeO₅
- 1.0 eV spin window for holes in YBaMnFeO₅
- 1.4 eV spin window for electrons in YBaMnFeO₅
- 420 K to 490 K magnetic retention for YBaMnFeO₅
What you need to act on it
- perfect crystal structure for YBaMnFeO₅
- dry, water-free sample for KV[Cr(CN)₆]
Sources